BAT74_3 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 3 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
6. Thermal characteristics
[1] Refer to SOT143B standard mounting conditions.
7. Characteristics
[1] Temperature coefficient of forward voltage ?0.6 %/K.
[2] Pulse test: tp
= 300
μs; δ
=0.02.
[3] When switched from IF
= 10 mA to IR
=10mA; RL
= 100
Ω; measured at IR
=1mA.
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
Tamb
=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage IF
= 0.1 mA - - 240 mV
IF
=1mA
[1]
- - 320 mV
IF
= 10 mA - - 400 mV
IF
= 30 mA - - 500 mV
IF
= 100 mA - - 800 mV
IR
reverse current VR
=25V
[2]
--2
μA
Cd
diode capacitance VR
=1V; f=1MHz --10pF
trr
reverse recovery
time
[3]
--5 ns
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